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vs-st083sp series www.vishay.com vishay semiconductors revision: 26-mar-14 1 document number: 94334 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 inverter grade thyristors (stud version), 85 a features ? center amplifying gate ? high surge current capability ? low thermal impedance ? high speed performance ? compression bonding ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications ?inverters ? choppers ? induction heating ? all types of force-commutated converters ? ? electrical specifications product summary package to-209ac (to-94) diode variation single scr i t(av) 85 a v drm /v rrm 400 v to 1200 v v tm 2.15 v i tsm at 50 hz 2450 a i tsm at 60 hz 2560 a i gt 200 ma t c /t hs 85 c to-209ac (to-94) major ratings and characteristics parameter test conditions values units i t(av) 85 a t c 85 c i t(rms) 135 a i tsm 50 hz 2450 a 60 hz 2560 a i 2 t 50 hz 30 ka 2 s 60 hz 27 v drm /v rrm 400 to 1200 v t q range 10 to 20 s t j -40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm max. at t j = t j max. ma vs-st083s 04 400 500 30 08 800 900 10 1000 1100 12 1200 1300
vs-st083sp series www.vishay.com vishay semiconductors revision: 26-mar-14 2 document number: 94334 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 current carrying capability frequency units 50 hz 210 120 330 270 2540 1930 a 400 hz 200 120 350 210 1190 810 1000 hz 150 80 320 190 630 400 2500 hz 70 25 220 85 250 100 recovery voltage v r 50 50 50 50 50 50 v voltage before turn-on v d v drm v drm v drm rise of on-state current di/dt 50 50 - - - - a/s case temperature 608560856085c equivalent values for rc ci rcuit 22/0.15 22/0.15 22/0.15 w/f on-state conduction parameter symbol test conditions values units maximum average on-state current at ? case temperature i t(av) 180 conduction, half sine wave 85 a 85 c maximum rms on-state current i t(rms) dc at 77 c case temperature 135 a maximum peak, one half cycle, non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, ? initial t j = t j maximum 2450 t = 8.3 ms 2560 t = 10 ms 100 % v rrm reapplied 2060 t = 8.3 ms 2160 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 30 ka 2 s t = 8.3 ms 27 t = 10 ms 100 % v rrm reapplied 21 t = 8.3 ms 19 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 300 ka 2 ? s maximum peak on -state voltage v tm i tm = 300 a, t j = t j maximum, t p = 10 ms sine wave pulse 2.15 v low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.46 high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 1.52 low level value of forward slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 2.32 m ? high level value of forward slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 2.34 maximum holding current i h t j = 25 c, i t > 30 a 600 ma typical latchi ng current i l t j = 25 c, v a = 12 v, r a = 6 ? , i g = 1 a 1000 switching parameter symbol test conditions values units min. max. maximum non-repetiti ve rate of rise ? of turned on current di/dt t j = t j max., v drm = rated v drm , i tm = 2 x di/dt 1000 a/s typical delay time t d t j = 25 c, v dm = rated v dm , i tm = 50 a dc, t p = 1 s ? resistive load, gate pulse: 10 v, 5 ? source 0.80 s maximum turn-off time t q t j = t j maximum, i tm = 100 a, ? commutating di/dt = 10 a/s ? v r = 50 v, t p = 200 s, dv/dt = 200 v/s 10 20 180 el i tm 180 el i tm 100 s i tm
vs-st083sp series www.vishay.com vishay semiconductors revision: 26-mar-14 3 document number: 94334 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc ? ? blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum, linear to 80 % v drm , ? higher value available on request 500 v/s maximum peak reverse and ? off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 30 ma triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, f = 50 hz, d% = 50 40 w maximum average gate power p g(av) 5 maximum peak positi ve gate current i gm t j = t j maximum, t p ? 5 ms 5a maximum peak positi ve gate voltage +v gm 20 v maximum peak negati ve gate voltage -v gm 5 maximum dc gate curren t required to trigger i gt t j = 25 c, v a = 12 v, r a = 6 ? 200 ma maximum dc gate voltag e required to trigger v gt 3v maximum dc gate curr ent not to trigger i gd t j = t j maximum, rated v drm /v rrm applied 20 ma maximum dc gate volt age not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j -40 to 125 c maximum storage temperature range t stg -40 to 150 maximum thermal resistan ce, junction to case r thjc dc operation 0.195 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.08 mounting torque, 10 % non-lubricated threads 15.5 (137) n m (lbf in) lubricated threads 14 (120) approximate weight 130 g case style see dimensions - link at the end of datasheet to-209ac (to-94) ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.034 0.025 t j = t j maximum k/w 120 0.041 0.042 90 0.052 0.056 60 0.076 0.079 30 0.126 0.127
vs-st083sp series www.vishay.com vishay semiconductors revision: 26-mar-14 4 document number: 94334 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ratings ch aracteristics fig. 2 - current ratings characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics st083s series r thjc (dc) = 0.195 k/w 110 100 90 80 130 030 60 90 maximum allowable case temperature (c) average on-state current (a) 10 40 70 20 50 80 120 30 60 90 120 180 ? conduction angle st083s series r thjc (dc) = 0.195 k/w 110 100 90 70 130 060 120 140 maximum allowable case temperature (c) average on-state current (a) 20 80 40 100 120 30 60 90 120 180 80 dc ? conduction period 0 20 40 60 80 100 120 140 160 180 0 102030405060708090 180 120 90 60 30 rms limit conduction angle maximum average on-state power loss (w) average on-state current (a) st083s series t j = 125 c ? maximum allowable ambient temperature (c) 0 20 25 50 75 100 125 40 60 80 100 120 140 160 180 maximum average on-state power loss (w) 0.2 k/w r thsa = 0.1 k/w - r 0.3 k/w 0.4 k/w 0.5 k/w 0.8 k/w 1.2 k/w 0 50 20 40 60 80 100 120 140 0 100 150 200 250 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) st083s series t j = 125 c average on-state current (a) ? maximum average on-state power loss (w) 0 50 100 150 200 250 0.2 k/w r thsa = 0. 1 k/w - r 0.3 k/w 0.4 k/w 0.5 k/w 0.8 k/w 1.2 k/w 25 50 75 100 125 maximum allowable ambient temperature (c)
vs-st083sp series www.vishay.com vishay semiconductors revision: 26-mar-14 5 document number: 94334 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current fig. 7 - on-state volt age drop characteristics fig. 8 - thermal impedance z thjc characteristic fig. 9 - reverse recovered charge characteristics fig. 10 - reverse recovery current characteristics 1000 1 10 100 1200 1400 1600 1800 2000 2200 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s st083s series at any rated load condition and with rated v rrm applied following surge 1000 0.01 0.1 1 1200 1400 1600 1800 2000 2200 2400 2600 pulse train duration (s) peak half sine wave on-state current (a) st083s series maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained initial t j = 125 c no voltage reapplied rated v rrm reapplied 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 1000 10 000 t j = 25 c t j = 125 c instantaneous on-state current (a) instantaneous on-state voltage (v) st083s series 0.01 0.01 0.1 1 10 0.001 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (k/w) st083s series steady state value r thjc = 0.195 k/w (dc operation) 20 20 10 30 40 50 60 70 80 90 100 40 60 80 100 120 140 160 st083s series t j = 125 c di/dt - rate of fall of on-state current (a/s) q rr - maximum reverse recovery charge (c) i tm = 500 a i tm = 300 a i tm = 100 a i tm = 50 a i tm = 200 a 10 20 30 40 50 60 70 80 90 100 110 120 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) st083s series t j = 125 c 20 10 30 40 50 60 70 80 90 100 i tm = 500 a i tm = 50 a i tm = 200 a i tm = 300 a i tm = 100 a
vs-st083sp series www.vishay.com vishay semiconductors revision: 26-mar-14 6 document number: 94334 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - frequency characteristics fig. 12 - frequency characteristics fig. 13 - frequency characteristics 10 10 100 1000 10 000 100 1000 10 000 400 2500 100 pulse basewidth (s) peak on-state current (a) 1000 1500 2000 3000 200 500 snubber circuit r s = 22 c s = 0.15 f v d = 80 % v drm 50 hz t p st083s series sinusoidal pulse t c = 60 c 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 22 c s = 0.15 f v d = 80 % v drm t p st083s series sinusoidal pulse t c = 85 c 400 2500 100 1000 1500 2000 3000 500 50 hz 200 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 22 c s = 0.15 f v d = 80 % v drm st083s series trapezoidal pulse t c = 60 c di/dt = 50 a/s t p 400 2500 100 1000 1500 2000 3000 200 500 50 hz 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 400 2500 100 1000 1500 2000 200 500 50 hz snubber circuit r s = 22 c s = 0.15 f v d = 80 % v drm st083s series trapezoidal pulse t c = 85 c di/dt = 50 a/s t p 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 400 2500 3000 100 1000 1500 2000 200 500 50 hz st083s series trapezoidal pulse t c = 60 c di/dt = 100 a/s t p snubber circuit r s = 22 c s = 0.15 f v d = 80 % v drm 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 400 2500 100 1000 1500 2000 200 500 50 hz snubber circuit r s = 22 c s = 0.15 f v d = 80 % v drm st083s series trapezoidal pulse t c = 85 c di/dt = 100 a/s t p
vs-st083sp series www.vishay.com vishay semiconductors revision: 26-mar-14 7 document number: 94334 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 14 - maximum on-state energy power loss characteristics fig. 15 - gate characteristics pulse basewidth (s) 20 joules per pulse 1 0.5 0.3 0.2 10 5 peak on-state current (a) 10 100 1000 10 000 10 100 1000 10 000 t p st083s series sinusoidal pulse 0.1 3 2 pulse basewidth (s) 20 joules per pulse 0.1 t p 10 100 1000 10 000 0.2 0.3 0.5 1 2 4 7.5 peak on-state current (a) 10 100 1000 10 000 st083s series rectangular pulse di/dt = 50 a/s 0.1 1 10 100 0.001 v gd i gd (b) (a) t j = 25 c t j = 125 c t j = 40 c (1) (2) instantaneous gate current (a) instantaneous gate voltage (v) (3) device: st083s series (4) frequency limited by p g(av) 0.01 0.1 1 10 100 rectangular gate pulse a) recommended load line for rated di/dt: 20 v, 10 ; t r 1 s b) recommended load line for 30 % rated di/dt: 10 v, 10 t r 1 s (1) p gm = 10 w, t p = 20 ms (2) p gm = 20 w, t p = 10 ms (3) p gm = 40 w, t p = 5 ms (4) p gm = 60 w, t p = 3.3 ms
vs-st083sp series www.vishay.com vishay semiconductors revision: 26-mar-14 8 document number: 94334 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table - thyristor 1 - vishay semiconductors product 2 - essential part number 3 - 3 = fast turn-off 4 - s = compression bonding stud 5 - voltage code x 100 = v rrm (see voltage ratings table) 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - critical dv/dt: none = 500 v/s (standard value) l = 1000 v/s (special selection) dv/dt - t q combinations available dv/dt (v/s) t q (s) 10 up to 800v only for 1000/1200 v 11 - none = standard production; p = lead (pb)-free 12 10 200 fn fk 20 20 t q (s) fk device code 5 1 3 2 4 6 7 8 9 11 12 10 st vs- 08 3 s 12 p f n 0 l p 6 - p = stud base 1/2"-20unf-2a threads m = metric m12, contact factory for availability - 0 = eyelet terminals (gate and aux. cathode leads) 1 = fast-on terminals (gate and aux. cathode leads) 2 = flag terminals (gate and aux. cathode leads) links to related documents dimensions www.vishay.com/doc?95003
document number: 95003 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 30-sep-08 1 to-209ac (to-94) for st 083s and st103s series outline dimensions vishay semiconductors dimensions in millimeters (inches) ceramic housing 1/2"-20unf-2a sw 27 red shrink red cathode red silicon rubber 12.5 (0.49) max. 29 (1.14) max. 21 (0.83) max. 157 (6.18) 170 (6.69) 70 (2.75) min. ? 4.3 (0.17) ? 8.5 (0.33) 16.5 (0.65) max. 29.5 (1.16) max. c.s. 0.4 mm 2 white shrink (0.0006 s.i.) ? 22.5 (0.88) max. white gate 215 10 (8.46 0.39) c.s. 16 mm 2 (0.025 s.i.) flexible lead 2.6 (0.10) max. 9.5 (0.37) min. 20 (0.79) min.
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